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1 / 1 www.dynexsemi.com features ? double side cooling ? high reliability in service ? high voltage capability ? fault protection without fuses ? high surge current capability ? turn - off capability allows reduction in equipment size and weight. low noise emission reduces acoustic cladding necessary for environmental requirements applications ? variable speed ac motor drive inverters (vsd - ac) ? uninterruptable power supplies ? high voltage converters ? choppers ? welding ? induction heating ? dc/dc converters key parameters v drm 2500v i t(av) 867a i tcm 2500a dv d /dt 1000v/s di t /dt 300a/s outline type code: h (see package details for further information) fig. 1 package outline voltage ratings type number repetitive peak off - state voltage v drm (v) repetitive peak reverse voltage v rrm (v) conditions dg646bh25 2500 16 t vj = 125c, i dm =50ma, i rrm = 50ma current ratings symbol parameter conditions max. units i tcm repetitive peak controllable on - state current v d = v drm , t j = 125c, di gq /dt = 40a/ ? s, c s = 6.0 ? f 2500 a i t(av) mean on - state current t hs = 80c, double side cooled. half sine 50hz 867 a i t(rms) rms on - state current t hs = 80c, double side cooled. half sine 50hz 1360 a dg646bh25 gate turn - off thyristor ds4092 - 5 july 2014 (ln 31756 )
semiconductor dg646bh25 2 / 2 www.dynexsemi.com surge ratings symbol parameter test conditions max. units i tsm surge (non repetitive) on - state current 10ms half sine. t j = 125c 18.0 ka i 2 t i 2 t for fusing 10ms half sine. t j = 125c 16.2 ma 2 s di t /dt critical rate of rise of on - state current v d = 1500v, i t = 2000a, t j = 125c, i fg > 30a, rise time > 1.0 ? s 300 a/ ? s dv d /dt rate of rise of off - state voltage to 66% v drm ; r gk ? 1.5 ? , t j = 125c 135 v/ ? s to 66% v drm ; v rg ? - 2v, t j = 125c 1000 v/ ? s l s peak stray inductance in snubber circuit i t = 2000a, v dm = 2500v, t j = 125c, di gq /dt = 40a/ ? s, c s = 2.0 ? f 200 nh gate ratings symbol parameter test conditions min. max. units v rgm peak reverse gate voltage this value may be exceeded during turn - off - 16 v i fgm peak forward gate current 20 100 a p fg(av) average forward gate power - 15 w p rgm peak reverse gate power - 19 kw di gq /dt rate of rise of reverse gate current 30 60 a/ ? s t on(min) minimum permissible on time 50 - ? s t off(min) minimum permissible off time 100 - ? s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - hs) thermal resistance C junction to heatsink surface double side cooled dc - 0.018 c/w single side cooled anode dc - 0.03 c/w cathode dc - 0.045 c/w r th(c - hs) contact thermal resistance clamping force 20.0kn with mounting compound per contact - 0.006 c/w t vj virtual junction temperature on - state (conducting) - 125 c t op /t stg operating junction/storage temperature range - 40 125 c f m clamping force 18.0 22.0 kn
semiconductor dg646bh25 3 / 3 www.dynexsemi.com characteristics t j = 125c unless stated otherwise symbol parameter test conditions min . max. units v tm on - state voltage at 2000a peak, i g(on) = 7a dc - 2.6 v i dm peak off - state current v drm = 2500v, v rg = 0v - 100 ma i rrm peak reverse current at v rrm - 50 ma v gt gate trigger voltage v d = 24v, i t = 100a, t j = 25c - 1.0 v i gt gate trigger current v d = 24v, i t = 100a, t j = 25c - 3.0 a i rgm reverse gate cathode current v rgm = 16v, no gate/cathode resistor - 50 ma e on turn - on energy v d = 1500v i t = 2000a, di t /dt = 300a/ ? s i fg = 30a, rise time < 1.0 ? s - 1188 mj t d delay time - 1.2 ? s t r rise time - 3.0 ? s e off turn - off energy i t = 2000a, v dm = 2500v, snubber capacitor c s = 2.0 ? f, di gq /dt = 40a/ ? s - 4000 mj t gs storage time - 17.0 ? s t gf fall time - 2.0 ? s t gq gate controlled turn - off time - 19.0 ? s q gq turn - off gate charge - 6600 ? c q gqt total turn - off gate charge - 13200 ? c i gqm peak reverse gate current - 650 a
semiconductor dg646bh25 4 / 4 www.dynexsemi.com fig.2 maximum gate trigger voltage/current vs junction temperature fig.3 on - state characteristics fig.4 maximum dependence of i tcm on c s fig.5 steady state sinusoidal wave conduction loss C double side cooled 0 500 1000 1500 2000 2500 3000 0 1 2 3 4 5 6 maximum permissible turn - off current i tcm - (a) snubber capacitance c s - (uf) conditions: 125 o c v dm = v drm di gq /dt = 40a/us
semiconductor dg646bh25 5 / 5 www.dynexsemi.com fig.6 surge (non - repetitive) on - state current vs time fig.7 steady state rectangular wave conduction loss C double side cooled fig.8 maximum (limit) transient thermal impedance C junction to case (c/kw)
semiconductor dg646bh25 6 / 6 www.dynexsemi.com fig.9 turn - on energy vs on - state current fig.10 turn - on energy vs peak forward gate current fig.11 turn - on energy vs on - state current fig.12 turn - on energy vs peak forward gate current
semiconductor dg646bh25 7 / 7 www.dynexsemi.com fig.13 turn - on energy vs rate of rise of on - state current fig.14 delay time & rise time vs turn - on current fig.15 delay time & rise time vs peak forward gate current fig.16 turn - off energy vs on - state current
semiconductor dg646bh25 8 / 8 www.dynexsemi.com fig.17 turn - off energy vs rate of rise of reverse gate current fig.18 turn - off energy vs on - state current fig.19 turn - off energy vs rate of rise of reverse gate current fig.20 turn - off energy vs on - state current
semiconductor dg646bh25 9 / 9 www.dynexsemi.com fig.21 gate storage time vs on - state current fig.22 gate storage time vs rate of rise of reverse gate current fig.23 gate fall time vs on - state current fig.24 gate fall time vs rate of rise of reverse gate current
semiconductor dg646bh25 10 / 10 www.dynexsemi.com fig.25 peak reverse gate current vs turn - off current fig.26 peak reverse gate current vs rate of rise of reverse gate current fig.27 turn - off gate charge vs on - state current fig.28 turn - off gate charge vs rate of rise of reverse gate current
semiconductor dg646bh25 11 / 11 www.dynexsemi.com fig.29 rate of rise of off - state voltage vs gate cathode resistance
semiconductor dg646bh25 12 / 12 www.dynexsemi.com fig.30 general switching waveforms
semiconductor dg646bh25 13 / 13 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. nominal weight: 820g clamping force: 20kn 10% lead coaxial, length: 600mm package outline type code: h fig.31 package outline
semiconductor dg646bh25 14 / 14 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suitability of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact customer service. alth ough we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographica l errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, in jury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electr ocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe ha ndling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the product. in extreme conditi ons, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be followed to protect pers ons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be supplied to the current ver sion of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this pu blication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .

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